SQD35N05-26L-GE3 - MOSFET N-CH 55V 30A TO252

typové označenie

SQD35N05-26L-GE3

Vnútorné Part Number

ABC-SQD35N05-26L-GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET N-CH 55V 30A TO252

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

47744 Pieces

referenčná cena

~~USD 0~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SQD35N05-26L-GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SQD35N05-26L-GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SQD35N05-26L-GE3

Výrobca : Vishay Siliconix

popis : MOSFET N-CH 55V 30A TO252

séria : TrenchFET®

Stav časti : Obsolete

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 55V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 30A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 20 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 18nC @ 5V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 1175pF @ 25V

Funkcia FET : -

Zníženie výkonu (Max) : 50W (Tc)

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : TO-252, (D-Pak)

Balík / Prípad : TO-252-3, DPak (2 Leads + Tab), SC-63

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SQD35 , SQD35N05

dokumenty pre SQD35N05-26L-GE3

listoch : SQD35N05-26L-GE3.pdf

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