APTM100VDA35T3G - MOSFET 2N-CH 1000V 22A SP3

typové označenie

APTM100VDA35T3G

Vnútorné Part Number

ABC-APTM100VDA35T3G

Výrobca

Microsemi Corporation

Stručný popis

MOSFET 2N-CH 1000V 22A SP3

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

60788 Pieces

referenčná cena

~~USD 0~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú APTM100VDA35T3G na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia APTM100VDA35T3G

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : APTM100VDA35T3G

Výrobca : Microsemi Corporation

popis : MOSFET 2N-CH 1000V 22A SP3

séria : POWER MOS 7®

Stav časti : Obsolete

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 1000V (1kV)

Prúd - kontinuálny odtok (Id) pri 25 ° C : 22A

Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V

Vgs (th) (Max) @ Id : 5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 5200pF @ 25V

Výkon - Max : 390W

Prevádzková teplota : -40°C ~ 150°C (TJ)

Typ montáže : Chassis Mount

Balík / Prípad : SP3

Dodávateľský balík zariadení : SP3

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : APTM1 , APTM100

dokumenty pre APTM100VDA35T3G

listoch : APTM100VDA35T3G.pdf

Súvisiace produkty pre APTM100VDA35T3G Microsemi Corporation

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