TK55S10N1,LQ - MOSFET N-CH 100V 55A DPAK

typové označenie

TK55S10N1,LQ

Vnútorné Part Number

ABC-TK55S10N1,LQ

Výrobca

Toshiba Semiconductor and Storage

Stručný popis

MOSFET N-CH 100V 55A DPAK

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

536858 Pieces

referenčná cena

~~USD 0.6097~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú TK55S10N1,LQ na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia TK55S10N1,LQ

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : TK55S10N1,LQ

Výrobca : Toshiba Semiconductor and Storage

popis : MOSFET N-CH 100V 55A DPAK

séria : U-MOSVIII-H

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 100V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 55A (Ta)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 27.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 49nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 3280pF @ 10V

Funkcia FET : -

Zníženie výkonu (Max) : 157W (Tc)

Prevádzková teplota : 175°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : DPAK+

Balík / Prípad : TO-252-3, DPak (2 Leads + Tab), SC-63

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : TK55 , TK55S1

dokumenty pre TK55S10N1,LQ

listoch : TK55S10N1,LQ.pdf

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