TSM60NB099PW C1G - MOSFET N-CHANNEL 600V 38A TO247

typové označenie

TSM60NB099PW C1G

Vnútorné Part Number

ABC-TSM60NB099PW C1G

Výrobca

Taiwan Semiconductor Corporation

Stručný popis

MOSFET N-CHANNEL 600V 38A TO247

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

106568 Pieces

referenčná cena

~~USD 3.51~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú TSM60NB099PW C1G na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia TSM60NB099PW C1G

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : TSM60NB099PW C1G

Výrobca : Taiwan Semiconductor Corporation

popis : MOSFET N-CHANNEL 600V 38A TO247

séria : -

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 600V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 38A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 99 mOhm @ 11.7A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V

Vgs (Max) : ±30V

Vstupná kapacita (Ciss) (Max) @ Vds : 2587pF @ 100V

Funkcia FET : -

Zníženie výkonu (Max) : 329W (Tc)

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Through Hole

Dodávateľský balík zariadení : TO-247

Balík / Prípad : TO-247-3

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : TSM60 , TSM60NB0

dokumenty pre TSM60NB099PW C1G

listoch : TSM60NB099PW C1G.pdf

Súvisiace produkty pre TSM60NB099PW C1G Taiwan Semiconductor Corporation

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