SQ3419AEEV-T1_GE3 - MOSFET P-CHANNEL 40V 6.9A 6TSOP

typové označenie

SQ3419AEEV-T1_GE3

Vnútorné Part Number

ABC-SQ3419AEEV-T1_GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET P-CHANNEL 40V 6.9A 6TSOP

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

2145682 Pieces

referenčná cena

~~USD 0.15255~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SQ3419AEEV-T1_GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SQ3419AEEV-T1_GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SQ3419AEEV-T1_GE3

Výrobca : Vishay Siliconix

popis : MOSFET P-CHANNEL 40V 6.9A 6TSOP

séria : Automotive, AEC-Q101, TrenchFET®

Stav časti : Active

Typ FET : P-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 40V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 6.9A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 61 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 12.5nC @ 4.5V

Vgs (Max) : ±12V

Vstupná kapacita (Ciss) (Max) @ Vds : 975pF @ 20V

Funkcia FET : -

Zníženie výkonu (Max) : 5W (Tc)

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : 6-TSOP

Balík / Prípad : SOT-23-6 Thin, TSOT-23-6

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SQ341 , SQ3419AE

dokumenty pre SQ3419AEEV-T1_GE3

listoch : SQ3419AEEV-T1_GE3.pdf

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