SIS822DNT-T1-GE3 - MOSFET N-CH 30V 12A POWERPAK1212

typové označenie

SIS822DNT-T1-GE3

Vnútorné Part Number

ABC-SIS822DNT-T1-GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET N-CH 30V 12A POWERPAK1212

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

5400059 Pieces

referenčná cena

~~USD 0.060615~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SIS822DNT-T1-GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SIS822DNT-T1-GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SIS822DNT-T1-GE3

Výrobca : Vishay Siliconix

popis : MOSFET N-CH 30V 12A POWERPAK1212

séria : -

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 30V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 12A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 24 mOhm @ 7.8A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 435pF @ 15V

Funkcia FET : -

Zníženie výkonu (Max) : 15.6W (Tc)

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : PowerPAK® 1212-8

Balík / Prípad : PowerPAK® 1212-8

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SIS82 , SIS822DN

dokumenty pre SIS822DNT-T1-GE3

listoch : SIS822DNT-T1-GE3.pdf

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