SQJ200EP-T1_GE3 - MOSFET 2N-CH 20V 20A/60A PPAK SO

typové označenie

SQJ200EP-T1_GE3

Vnútorné Part Number

ABC-SQJ200EP-T1_GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET 2N-CH 20V 20A/60A PPAK SO

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1328418 Pieces

referenčná cena

~~USD 0.2464~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SQJ200EP-T1_GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SQJ200EP-T1_GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SQJ200EP-T1_GE3

Výrobca : Vishay Siliconix

popis : MOSFET 2N-CH 20V 20A/60A PPAK SO

séria : Automotive, AEC-Q101, TrenchFET®

Stav časti : Active

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 20V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 20A, 60A

Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 975pF @ 10V

Výkon - Max : 27W, 48W

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : PowerPAK® SO-8 Dual

Dodávateľský balík zariadení : PowerPAK® SO-8 Dual Asymmetric

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SQJ20 , SQJ200E

dokumenty pre SQJ200EP-T1_GE3

listoch : SQJ200EP-T1_GE3.pdf

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