SIZF920DT-T1-GE3 - MOSFET DL N-CH 30V POWERPAIR 6X5

typové označenie

SIZF920DT-T1-GE3

Vnútorné Part Number

ABC-SIZF920DT-T1-GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET DL N-CH 30V POWERPAIR 6X5

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

720321 Pieces

referenčná cena

~~USD 0.45441~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SIZF920DT-T1-GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SIZF920DT-T1-GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SIZF920DT-T1-GE3

Výrobca : Vishay Siliconix

popis : MOSFET DL N-CH 30V POWERPAIR 6X5

séria : TrenchFET® Gen IV

Stav časti : Active

Typ FET : 2 N-Channel (Dual), Schottky

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 30V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)

Rds On (Max) @ Id, Vgs : 3.07 mOhm @ 10A, 10V, 1.05 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA, 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V, 125nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 1300pF @ 15V, 5230pF @ 15V

Výkon - Max : 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-PowerWDFN

Dodávateľský balík zariadení : 8-PowerPair® (6x5)

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SIZF9 , SIZF920D

dokumenty pre SIZF920DT-T1-GE3

listoch : SIZF920DT-T1-GE3.pdf

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