SQJ431AEP-T1_GE3 - MOSFET P-CHAN 200V

typové označenie

SQJ431AEP-T1_GE3

Vnútorné Part Number

ABC-SQJ431AEP-T1_GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET P-CHAN 200V

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

822535 Pieces

referenčná cena

~~USD 0.397945~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SQJ431AEP-T1_GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SQJ431AEP-T1_GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SQJ431AEP-T1_GE3

Výrobca : Vishay Siliconix

popis : MOSFET P-CHAN 200V

séria : Automotive, AEC-Q101, TrenchFET®

Stav časti : Active

Typ FET : P-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 200V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 9.4A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 305 mOhm @ 3.8A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 85nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 3700pF @ 25V

Funkcia FET : -

Zníženie výkonu (Max) : 68W (Tc)

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : PowerPAK® SO-8

Balík / Prípad : 8-PowerTDFN

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SQJ43 , SQJ431AE

dokumenty pre SQJ431AEP-T1_GE3

listoch : SQJ431AEP-T1_GE3.pdf

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