RJK60S7DPK-M0#T0 - MOSFET N-CH 600V 30A TO-3PSG

typové označenie

RJK60S7DPK-M0#T0

Vnútorné Part Number

ABC-RJK60S7DPK-M0#T0

Výrobca

Renesas Electronics America

Stručný popis

MOSFET N-CH 600V 30A TO-3PSG

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

106872 Pieces

referenčná cena

~~USD 3.5~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú RJK60S7DPK-M0#T0 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia RJK60S7DPK-M0#T0

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : RJK60S7DPK-M0#T0

Výrobca : Renesas Electronics America

popis : MOSFET N-CH 600V 30A TO-3PSG

séria : -

Stav časti : Obsolete

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 600V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 30A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 125 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V

Vgs (Max) : +30V, -20V

Vstupná kapacita (Ciss) (Max) @ Vds : 2300pF @ 25V

Funkcia FET : Super Junction

Zníženie výkonu (Max) : 227.2W (Tc)

Prevádzková teplota : 150°C (TJ)

Typ montáže : Through Hole

Dodávateľský balík zariadení : TO-3PSG

Balík / Prípad : TO-3P-3, SC-65-3

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : RJK60 , RJK60S7D

dokumenty pre RJK60S7DPK-M0#T0

listoch : RJK60S7DPK-M0#T0.pdf

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