TK4R3E06PL,S1X - X35 PB-F POWER MOSFET TRANSISTOR

typové označenie

TK4R3E06PL,S1X

Vnútorné Part Number

ABC-TK4R3E06PL,S1X

Výrobca

Toshiba Semiconductor and Storage

Stručný popis

X35 PB-F POWER MOSFET TRANSISTOR

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

330624 Pieces

referenčná cena

~~USD 0.99~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú TK4R3E06PL,S1X na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia TK4R3E06PL,S1X

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : TK4R3E06PL,S1X

Výrobca : Toshiba Semiconductor and Storage

popis : X35 PB-F POWER MOSFET TRANSISTOR

séria : U-MOSIX-H

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 60V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 80A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 7.2 mOhm @ 15A, 4.5V

Vgs (th) (Max) @ Id : 2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 48.2nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 3280pF @ 30V

Funkcia FET : -

Zníženie výkonu (Max) : 87W (Tc)

Prevádzková teplota : 175°C (TJ)

Typ montáže : Through Hole

Dodávateľský balík zariadení : TO-220

Balík / Prípad : TO-220-3

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : TK4R , TK4R3E0

dokumenty pre TK4R3E06PL,S1X

listoch : TK4R3E06PL,S1X.pdf

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