TPC8110(TE12L,Q,M) - MOSFET P-CH 40V 8A SOP8 2-6J1B

typové označenie

TPC8110(TE12L,Q,M)

Vnútorné Part Number

ABC-TPC8110(TE12L,Q,M)

Výrobca

Toshiba Semiconductor and Storage

Stručný popis

MOSFET P-CH 40V 8A SOP8 2-6J1B

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

43860 Pieces

referenčná cena

~~USD 0~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú TPC8110(TE12L,Q,M) na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia TPC8110(TE12L,Q,M)

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : TPC8110(TE12L,Q,M)

Výrobca : Toshiba Semiconductor and Storage

popis : MOSFET P-CH 40V 8A SOP8 2-6J1B

séria : U-MOSIII

Stav časti : Obsolete

Typ FET : P-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 40V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 8A (Ta)

Napätie pohonu (Max Rds On, Min Rds On) : 4V, 10V

Rds On (Max) @ Id, Vgs : 25 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 2180pF @ 10V

Funkcia FET : -

Zníženie výkonu (Max) : 1W (Ta)

Prevádzková teplota : 150°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : 8-SOP (5.5x6.0)

Balík / Prípad : 8-SOIC (0.173", 4.40mm Width)

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : TPC811 , TPC8110(T

dokumenty pre TPC8110(TE12L,Q,M)

listoch : TPC8110(TE12L,Q,M).pdf

Súvisiace produkty pre TPC8110(TE12L,Q,M) Toshiba Semiconductor and Storage

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