IPG20N06S4L14ATMA1 - MOSFET 2N-CH 8TDSON

typové označenie

IPG20N06S4L14ATMA1

Vnútorné Part Number

ABC-IPG20N06S4L14ATMA1

Výrobca

Infineon Technologies

Stručný popis

MOSFET 2N-CH 8TDSON

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

53417 Pieces

referenčná cena

~~USD 0~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú IPG20N06S4L14ATMA1 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia IPG20N06S4L14ATMA1

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : IPG20N06S4L14ATMA1

Výrobca : Infineon Technologies

popis : MOSFET 2N-CH 8TDSON

séria : Automotive, AEC-Q101, OptiMOS™

Stav časti : Discontinued at Digi-Key

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Logic Level Gate

Vypúšťanie na zdrojové napätie (Vdss) : 60V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 20A

Rds On (Max) @ Id, Vgs : 13.7 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 2890pF @ 25V

Výkon - Max : 50W

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-PowerVDFN

Dodávateľský balík zariadení : PG-TDSON-8-4

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : IPG20N , IPG20N06S

dokumenty pre IPG20N06S4L14ATMA1

listoch : IPG20N06S4L14ATMA1.pdf

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