TK14G65W,RQ - MOSFET N-CH 650V 13.7A D2PAK

typové označenie

TK14G65W,RQ

Vnútorné Part Number

ABC-TK14G65W,RQ

Výrobca

Toshiba Semiconductor and Storage

Stručný popis

MOSFET N-CH 650V 13.7A D2PAK

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

627053 Pieces

referenčná cena

~~USD 0.522~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú TK14G65W,RQ na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia TK14G65W,RQ

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : TK14G65W,RQ

Výrobca : Toshiba Semiconductor and Storage

popis : MOSFET N-CH 650V 13.7A D2PAK

séria : DTMOSIV

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 650V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 13.7A (Ta)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 250 mOhm @ 6.9A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 690µA

Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (Max) : ±30V

Vstupná kapacita (Ciss) (Max) @ Vds : 1300pF @ 300V

Funkcia FET : -

Zníženie výkonu (Max) : 130W (Tc)

Prevádzková teplota : 150°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : D2PAK

Balík / Prípad : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : TK1 , TK14G

dokumenty pre TK14G65W,RQ

listoch : TK14G65W,RQ.pdf

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