PHM25NQ10T,518 - MOSFET N-CH 100V 30.7A 8HVSON

typové označenie

PHM25NQ10T,518

Vnútorné Part Number

ABC-PHM25NQ10T,518

Výrobca

NXP USA Inc.

Stručný popis

MOSFET N-CH 100V 30.7A 8HVSON

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

79794 Pieces

referenčná cena

~~USD 0~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú PHM25NQ10T,518 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia PHM25NQ10T,518

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : PHM25NQ10T,518

Výrobca : NXP USA Inc.

popis : MOSFET N-CH 100V 30.7A 8HVSON

séria : TrenchMOS™

Stav časti : Obsolete

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 100V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 30.7A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 30 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 26.6nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 1800pF @ 20V

Funkcia FET : -

Zníženie výkonu (Max) : 62.5W (Tc)

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : 8-HVSON (6x5)

Balík / Prípad : 8-VDFN Exposed Pad

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : PHM2 , PHM25NQ

dokumenty pre PHM25NQ10T,518

listoch : PHM25NQ10T,518.pdf

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