SQJ912AEP-T1_GE3 - MOSFET 2N-CH 40V 30A PPAK SO-8

typové označenie

SQJ912AEP-T1_GE3

Vnútorné Part Number

ABC-SQJ912AEP-T1_GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET 2N-CH 40V 30A PPAK SO-8

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1069313 Pieces

referenčná cena

~~USD 0.306105~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SQJ912AEP-T1_GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SQJ912AEP-T1_GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SQJ912AEP-T1_GE3

Výrobca : Vishay Siliconix

popis : MOSFET 2N-CH 40V 30A PPAK SO-8

séria : Automotive, AEC-Q101, TrenchFET®

Stav časti : Active

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 40V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 30A

Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 9.7A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 1835pF @ 20V

Výkon - Max : 48W

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : PowerPAK® SO-8 Dual

Dodávateľský balík zariadení : PowerPAK® SO-8 Dual

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SQJ91 , SQJ912AE

dokumenty pre SQJ912AEP-T1_GE3

listoch : SQJ912AEP-T1_GE3.pdf

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