TK4A60DB(STA4,Q,M) - MOSFET N-CH 600V 3.7A TO-220SIS

typové označenie

TK4A60DB(STA4,Q,M)

Vnútorné Part Number

ABC-TK4A60DB(STA4,Q,M)

Výrobca

Toshiba Semiconductor and Storage

Stručný popis

MOSFET N-CH 600V 3.7A TO-220SIS

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

51072 Pieces

referenčná cena

~~USD 0~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú TK4A60DB(STA4,Q,M) na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia TK4A60DB(STA4,Q,M)

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : TK4A60DB(STA4,Q,M)

Výrobca : Toshiba Semiconductor and Storage

popis : MOSFET N-CH 600V 3.7A TO-220SIS

séria : π-MOSVII

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 600V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 3.7A (Ta)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2 Ohm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (Max) : ±30V

Vstupná kapacita (Ciss) (Max) @ Vds : 540pF @ 25V

Funkcia FET : -

Zníženie výkonu (Max) : 35W (Tc)

Prevádzková teplota : 150°C (TJ)

Typ montáže : Through Hole

Dodávateľský balík zariadení : TO-220SIS

Balík / Prípad : TO-220-3 Full Pack

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : TK4A60 , TK4A60DB(

dokumenty pre TK4A60DB(STA4,Q,M)

listoch : TK4A60DB(STA4,Q,M).pdf

Súvisiace produkty pre TK4A60DB(STA4,Q,M) Toshiba Semiconductor and Storage

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