SI7998DP-T1-GE3 - MOSFET 2N-CH 30V 25A PPAK SO-8

typové označenie

SI7998DP-T1-GE3

Vnútorné Part Number

ABC-SI7998DP-T1-GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET 2N-CH 30V 25A PPAK SO-8

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

867769 Pieces

referenčná cena

~~USD 0.3772~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SI7998DP-T1-GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SI7998DP-T1-GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SI7998DP-T1-GE3

Výrobca : Vishay Siliconix

popis : MOSFET 2N-CH 30V 25A PPAK SO-8

séria : TrenchFET®

Stav časti : Active

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Logic Level Gate

Vypúšťanie na zdrojové napätie (Vdss) : 30V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 25A, 30A

Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 1100pF @ 15V

Výkon - Max : 22W, 40W

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : PowerPAK® SO-8 Dual

Dodávateľský balík zariadení : PowerPAK® SO-8 Dual

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SI799 , SI7998D

dokumenty pre SI7998DP-T1-GE3

listoch : SI7998DP-T1-GE3.pdf

Súvisiace produkty pre SI7998DP-T1-GE3 Vishay Siliconix

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