FF8MR12W2M1B11BOMA1 - MOSFET MODULE 1200V 150A

typové označenie

FF8MR12W2M1B11BOMA1

Vnútorné Part Number

ABC-FF8MR12W2M1B11BOMA1

Výrobca

Infineon Technologies

Stručný popis

MOSFET MODULE 1200V 150A

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

59300 Pieces

referenčná cena

~~USD 122.715~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú FF8MR12W2M1B11BOMA1 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia FF8MR12W2M1B11BOMA1

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : FF8MR12W2M1B11BOMA1

Výrobca : Infineon Technologies

popis : MOSFET MODULE 1200V 150A

séria : CoolSiC™

Stav časti : Active

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Silicon Carbide (SiC)

Vypúšťanie na zdrojové napätie (Vdss) : 1200V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 150A (Tj)

Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 150A, 15V (Typ)

Vgs (th) (Max) @ Id : 5.55V @ 60mA

Gate Charge (Qg) (Max) @ Vgs : 372nC @ 15V

Vstupná kapacita (Ciss) (Max) @ Vds : 11000pF @ 800V

Výkon - Max : 20mW (Tc)

Prevádzková teplota : -40°C ~ 150°C (TJ)

Typ montáže : Chassis Mount

Balík / Prípad : Module

Dodávateľský balík zariadení : AG-EASY2BM-2

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : FF8MR1 , FF8MR12W2

dokumenty pre FF8MR12W2M1B11BOMA1

listoch : FF8MR12W2M1B11BOMA1.pdf

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