IPD180N10N3GBTMA1 - MOSFET N-CH 100V 43A TO252-3

typové označenie

IPD180N10N3GBTMA1

Vnútorné Part Number

ABC-IPD180N10N3GBTMA1

Výrobca

Infineon Technologies

Stručný popis

MOSFET N-CH 100V 43A TO252-3

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1416982 Pieces

referenčná cena

~~USD 0.231~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú IPD180N10N3GBTMA1 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia IPD180N10N3GBTMA1

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : IPD180N10N3GBTMA1

Výrobca : Infineon Technologies

popis : MOSFET N-CH 100V 43A TO252-3

séria : OptiMOS™

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 100V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 43A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 18 mOhm @ 33A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 1800pF @ 50V

Funkcia FET : -

Zníženie výkonu (Max) : 71W (Tc)

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : PG-TO252-3

Balík / Prípad : TO-252-3, DPak (2 Leads + Tab), SC-63

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : IPD18 , IPD180N1

dokumenty pre IPD180N10N3GBTMA1

listoch : IPD180N10N3GBTMA1.pdf

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