FDB045AN08A0-F085 - MOSFET N-CH 75V 19A D2PAK

typové označenie

FDB045AN08A0-F085

Vnútorné Part Number

ABC-FDB045AN08A0-F085

Výrobca

ON Semiconductor

Stručný popis

MOSFET N-CH 75V 19A D2PAK

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

218862 Pieces

referenčná cena

~~USD 1.495475~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú FDB045AN08A0-F085 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia FDB045AN08A0-F085

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : FDB045AN08A0-F085

Výrobca : ON Semiconductor

popis : MOSFET N-CH 75V 19A D2PAK

séria : Automotive, AEC-Q101, PowerTrench®

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 75V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 19A (Ta)

Napätie pohonu (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 138nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 6600pF @ 25V

Funkcia FET : -

Zníženie výkonu (Max) : 310W (Tc)

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Dodávateľský balík zariadení : TO-263AB

Balík / Prípad : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : FDB04 , FDB045AN

dokumenty pre FDB045AN08A0-F085

listoch : FDB045AN08A0-F085.pdf

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