SIZ926DT-T1-GE3 - MOSFET 2 N-CH 25V 8-POWERPAIR

typové označenie

SIZ926DT-T1-GE3

Vnútorné Part Number

ABC-SIZ926DT-T1-GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET 2 N-CH 25V 8-POWERPAIR

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1136618 Pieces

referenčná cena

~~USD 0.28798~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SIZ926DT-T1-GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SIZ926DT-T1-GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SIZ926DT-T1-GE3

Výrobca : Vishay Siliconix

popis : MOSFET 2 N-CH 25V 8-POWERPAIR

séria : TrenchFET® Gen IV

Stav časti : Active

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 25V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 40A (Tc), 60A (Tc)

Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V, 41nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 925pF @ 10V, 2150pF @ 10V

Výkon - Max : 20.2W, 40W

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-PowerWDFN

Dodávateľský balík zariadení : 8-PowerPair® (6x5)

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SIZ92 , SIZ926D

dokumenty pre SIZ926DT-T1-GE3

listoch : SIZ926DT-T1-GE3.pdf

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