DGD2190S8-13 - IC GATE DRVR HALF-BRIDGE 8SO

typové označenie

DGD2190S8-13

Vnútorné Part Number

ABC-DGD2190S8-13

Výrobca

Diodes Incorporated

Stručný popis

IC GATE DRVR HALF-BRIDGE 8SO

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

795921 Pieces

referenčná cena

~~USD 0.45725~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú DGD2190S8-13 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia DGD2190S8-13

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : DGD2190S8-13

Výrobca : Diodes Incorporated

popis : IC GATE DRVR HALF-BRIDGE 8SO

séria : -

Stav časti : Not For New Designs

Riadená konfigurácia : Half-Bridge

Typ kanála : Independent

Počet vodičov : 2

Typ brány : IGBT, N-Channel MOSFET

Napätie - napájanie : 10V ~ 20V

Logické napätie - VIL, VIH : 0.8V, 2.5V

Current - Peak Output (Zdroj, Sink) : 4.5A, 4.5A

Typ vstupu : Non-Inverting

Vysoké napätie na strane - Max (Bootstrap) : 600V

Doba vzostupu / pádu (Typ) : 25ns, 20ns

Prevádzková teplota : -40°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-SOIC (0.154", 3.90mm Width)

Dodávateľský balík zariadení : 8-SO

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : DGD2 , DGD219

dokumenty pre DGD2190S8-13

listoch : DGD2190S8-13.pdf

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