IRFB17N20D - MOSFET N-CH 200V 16A TO-220AB

typové označenie

IRFB17N20D

Vnútorné Part Number

ABC-IRFB17N20D

Výrobca

Infineon Technologies

Stručný popis

MOSFET N-CH 200V 16A TO-220AB

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

101528 Pieces

referenčná cena

~~USD 0~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú IRFB17N20D na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia IRFB17N20D

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : IRFB17N20D

Výrobca : Infineon Technologies

popis : MOSFET N-CH 200V 16A TO-220AB

séria : HEXFET®

Stav časti : Obsolete

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 200V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 16A (Tc)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 170 mOhm @ 9.8A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V

Vgs (Max) : ±30V

Vstupná kapacita (Ciss) (Max) @ Vds : 1100pF @ 25V

Funkcia FET : -

Zníženie výkonu (Max) : 3.8W (Ta), 140W (Tc)

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Through Hole

Dodávateľský balík zariadení : TO-220AB

Balík / Prípad : TO-220-3

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : IRF , IRFB1

dokumenty pre IRFB17N20D

listoch : IRFB17N20D.pdf

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