ALD111933PAL - MOSFET 2N-CH 10.6V 8DIP

typové označenie

ALD111933PAL

Vnútorné Part Number

ABC-ALD111933PAL

Výrobca

Advanced Linear Devices Inc.

Stručný popis

MOSFET 2N-CH 10.6V 8DIP

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

202752 Pieces

referenčná cena

~~USD 1.845~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú ALD111933PAL na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia ALD111933PAL

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : ALD111933PAL

Výrobca : Advanced Linear Devices Inc.

popis : MOSFET 2N-CH 10.6V 8DIP

séria : EPAD®

Stav časti : Active

Typ FET : 2 N-Channel (Dual) Matched Pair

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 10.6V

Prúd - kontinuálny odtok (Id) pri 25 ° C : -

Rds On (Max) @ Id, Vgs : 500 Ohm @ 5.9V

Vgs (th) (Max) @ Id : 3.35V @ 1µA

Gate Charge (Qg) (Max) @ Vgs : -

Vstupná kapacita (Ciss) (Max) @ Vds : 2.5pF @ 5V

Výkon - Max : 500mW

Prevádzková teplota : 0°C ~ 70°C (TJ)

Typ montáže : Through Hole

Balík / Prípad : 8-DIP (0.300", 7.62mm)

Dodávateľský balík zariadení : 8-PDIP

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : ALD1 , ALD111

dokumenty pre ALD111933PAL

listoch : ALD111933PAL.pdf

Súvisiace produkty pre ALD111933PAL Advanced Linear Devices Inc.

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