DMT3011LDT-7 - MOSFET 2N-CH 30V 8A V-DFN3030-8

typové označenie

DMT3011LDT-7

Vnútorné Part Number

ABC-DMT3011LDT-7

Výrobca

Diodes Incorporated

Stručný popis

MOSFET 2N-CH 30V 8A V-DFN3030-8

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1620892 Pieces

referenčná cena

~~USD 0.20194~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú DMT3011LDT-7 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia DMT3011LDT-7

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : DMT3011LDT-7

Výrobca : Diodes Incorporated

popis : MOSFET 2N-CH 30V 8A V-DFN3030-8

séria : -

Stav časti : Active

Typ FET : 2 N-Channel (Dual) Asymmetrical

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 30V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 8A, 10.7A

Rds On (Max) @ Id, Vgs : 20 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 13.2nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 641pF @ 15V

Výkon - Max : 1.9W

Prevádzková teplota : -55°C ~ 155°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-VDFN Exposed Pad

Dodávateľský balík zariadení : V-DFN3030-8 (Type K)

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : DMT3 , DMT301

dokumenty pre DMT3011LDT-7

listoch : DMT3011LDT-7.pdf

Súvisiace produkty pre DMT3011LDT-7 Diodes Incorporated

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