RJK1003DPN-E0#T2 - MOSFET N-CH 100V 50A TO220

typové označenie

RJK1003DPN-E0#T2

Vnútorné Part Number

ABC-RJK1003DPN-E0#T2

Výrobca

Renesas Electronics America

Stručný popis

MOSFET N-CH 100V 50A TO220

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

464814 Pieces

referenčná cena

~~USD 0.7042~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú RJK1003DPN-E0#T2 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia RJK1003DPN-E0#T2

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : RJK1003DPN-E0#T2

Výrobca : Renesas Electronics America

popis : MOSFET N-CH 100V 50A TO220

séria : -

Stav časti : Active

Typ FET : N-Channel

technológie : MOSFET (Metal Oxide)

Vypúšťanie na zdrojové napätie (Vdss) : 100V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 50A (Ta)

Napätie pohonu (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : 59nC @ 10V

Vgs (Max) : ±20V

Vstupná kapacita (Ciss) (Max) @ Vds : 4150pF @ 10V

Funkcia FET : -

Zníženie výkonu (Max) : 125W (Tc)

Prevádzková teplota : 150°C (TJ)

Typ montáže : Through Hole

Dodávateľský balík zariadení : TO-220AB

Balík / Prípad : TO-220-3

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : RJK10 , RJK1003D

dokumenty pre RJK1003DPN-E0#T2

listoch : RJK1003DPN-E0#T2.pdf

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