SIZ320DT-T1-GE3 - MOSFET 2N-CH 25V 30/40A 8POWER33

typové označenie

SIZ320DT-T1-GE3

Vnútorné Part Number

ABC-SIZ320DT-T1-GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET 2N-CH 25V 30/40A 8POWER33

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1717289 Pieces

referenčná cena

~~USD 0.190605~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SIZ320DT-T1-GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SIZ320DT-T1-GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SIZ320DT-T1-GE3

Výrobca : Vishay Siliconix

popis : MOSFET 2N-CH 25V 30/40A 8POWER33

séria : PowerPAIR®, TrenchFET®

Stav časti : Active

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 25V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 30A (Tc), 40A (Tc)

Rds On (Max) @ Id, Vgs : 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 8.9nC @ 4.5V, 11.9nC @ 4.5V

Vstupná kapacita (Ciss) (Max) @ Vds : 660pF @ 12.5V, 1370pF @ 12.5V

Výkon - Max : 16.7W, 31W

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-PowerWDFN

Dodávateľský balík zariadení : 8-Power33 (3x3)

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SIZ32 , SIZ320D

dokumenty pre SIZ320DT-T1-GE3

listoch : SIZ320DT-T1-GE3.pdf

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