SQ4532AEY-T1_GE3 - MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

typové označenie

SQ4532AEY-T1_GE3

Vnútorné Part Number

ABC-SQ4532AEY-T1_GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1722987 Pieces

referenčná cena

~~USD 0.189975~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SQ4532AEY-T1_GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SQ4532AEY-T1_GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SQ4532AEY-T1_GE3

Výrobca : Vishay Siliconix

popis : MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

séria : Automotive, AEC-Q101, TrenchFET®

Stav časti : Active

Typ FET : N and P-Channel

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 30V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 7.3A (Tc), 5.3A (Tc)

Rds On (Max) @ Id, Vgs : 31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 7.8nC @ 10V, 10.2nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 535pF @ 15V, 528pF @ 15V

Výkon - Max : 3.3W

Prevádzková teplota : -55°C ~ 175°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-SOIC (0.154", 3.90mm Width)

Dodávateľský balík zariadení : 8-SOIC

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SQ453 , SQ4532AE

dokumenty pre SQ4532AEY-T1_GE3

listoch : SQ4532AEY-T1_GE3.pdf

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