SI4946CDY-T1-GE3 - MOSFET N-CHAN DUAL 60V SO-8

typové označenie

SI4946CDY-T1-GE3

Vnútorné Part Number

ABC-SI4946CDY-T1-GE3

Výrobca

Vishay Siliconix

Stručný popis

MOSFET N-CHAN DUAL 60V SO-8

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

1689058 Pieces

referenčná cena

~~USD 0.19379~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú SI4946CDY-T1-GE3 na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia SI4946CDY-T1-GE3

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : SI4946CDY-T1-GE3

Výrobca : Vishay Siliconix

popis : MOSFET N-CHAN DUAL 60V SO-8

séria : TrenchFET®

Stav časti : Active

Typ FET : 2 N-Channel (Dual)

Funkcia FET : Standard

Vypúšťanie na zdrojové napätie (Vdss) : 60V

Prúd - kontinuálny odtok (Id) pri 25 ° C : 5.2A (Ta), 6.1A (Tc)

Rds On (Max) @ Id, Vgs : 40.9 mOhm @ 5.2A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V

Vstupná kapacita (Ciss) (Max) @ Vds : 350pF @ 30V

Výkon - Max : 2W (Ta), 2.8W (Tc)

Prevádzková teplota : -55°C ~ 150°C (TJ)

Typ montáže : Surface Mount

Balík / Prípad : 8-SOIC (0.154", 3.90mm Width)

Dodávateľský balík zariadení : 8-SO

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : SI494 , SI4946CD

dokumenty pre SI4946CDY-T1-GE3

listoch : SI4946CDY-T1-GE3.pdf

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