RN2710JE(TE85L,F) - TRANS 2PNP PREBIAS 0.1W ESV

typové označenie

RN2710JE(TE85L,F)

Vnútorné Part Number

ABC-RN2710JE(TE85L,F)

Výrobca

Toshiba Semiconductor and Storage

Stručný popis

TRANS 2PNP PREBIAS 0.1W ESV

stav RoHS

Bezolovnaté / V súlade s normou RoHS

dodacia lehota

1-2 dni

K dispozícii Množstvo

7422324 Pieces

referenčná cena

~~USD 0.0441~~

Naša cena

- (prosím, kontaktujte nás za lepšiu cenu: [email protected])

ABC Semiconductor majú RN2710JE(TE85L,F) na sklade na predaj.

Lodné možnosti a lodné čas:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Možnosti platby:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

špecifikácia RN2710JE(TE85L,F)

záruka kvality : 365 dní záruka

sklad Resource : Franšízovanej Distribútor / Výrobca Direct

Krajina pôvodu : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Číslo dielu : RN2710JE(TE85L,F)

Výrobca : Toshiba Semiconductor and Storage

popis : TRANS 2PNP PREBIAS 0.1W ESV

séria : -

Stav časti : Active

Typ tranzistora : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Prúd - kolektor (Ic) (Max) : 100mA

Napätie - Rozdelenie vysielača kolektora (Max) : 50V

Rezistor - základňa (R1) \ t : 4.7 kOhms

Rezistor - Emitter Base (R2) : -

Zisk prúdu DC (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Prúd - Odpojenie kolektora (Max) : 100nA (ICBO)

Frekvencia - Prechod : 200MHz

Výkon - Max : 100mW

Typ montáže : Surface Mount

Balík / Prípad : SOT-553

Dodávateľský balík zariadení : ESV

závažia : -

podmienka : Nové a originálne

súvisiace odkazy : RN271 , RN2710JE

dokumenty pre RN2710JE(TE85L,F)

listoch : RN2710JE(TE85L,F).pdf

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